FDMS2510SDC Fairchild Semiconductor, FDMS2510SDC Datasheet - Page 2

• Manufacturer Part Number: FDMS2510SDC
• Description: MOSFET N-CH 20V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2510SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Forward Transconductance Gfs (max / Min): 159 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2510SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 23 A, di/dt = 300 A/ μs
= 10 mA, referenced to 25 °C
= 1 mA, V
= 10 mA, referenced to 25 °C
= 13 V, V
= 13 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 2 A
= 23 A
D
= 23 A
GS
GEN
GS
DS
= 1 mA
= 23 A,
= 23 A, T
= 23 A
= 18 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 23 A
J
= 13 V,
= 125 °C
(Note 2)
(Note 2)
Min
1.2
25
2090
0.48
0.79
577
128
159
1.1
Typ
1.7
2.4
3.4
3.5
6.3
4.0
23
17
10
27
32
15
-5
19
4
3
2780
Max
770
195
2.4
0.8
1.2
500
100
3.0
2.9
4.2
4.3
36
31
20
10
43
10
45
21
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mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
S
V
V