FDMS2510SDC Fairchild Semiconductor, FDMS2510SDC Datasheet - Page 5

• Manufacturer Part Number: FDMS2510SDC
• Description: MOSFET N-CH 20V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2510SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Forward Transconductance Gfs (max / Min): 159 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2510SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C1
Typical Characteristics
Figure 9.
0.01
500
100
0.1
10
10
50
10
Figure 7.
1
8
6
4
2
0
1
0.01
0.01
0
Unclamped Inductive Switching Capability
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
Figure 11.
J
A
I
θ
D
JA
= MAX RATED
= 25
= 23A
= 81
5
V
o
C
Gate Charge Characteristics
DS
V
0.1
o
DD
C/W
0.1
t
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
AV
10
= 10 V
, TIME IN AVALANCHE (ms)
Q
(
on
Forward Bias Safe
g
, GATE CHARGE (nC)
)
T
V
15
J
DD
= 125
T
1
= 13 V
J
= 25
1
o
T
20
C
o
J
C
T
= 25 °C unless otherwise noted
J
V
= 100
DD
10
25
= 16 V
10
o
C
10 ms
100 ms
1 ms
1 s
10 s
100 us
DC
30
100
1000
200
35
5
10000
5000
1000
1000
150
100
100
100
0.5
50
50
10
Figure 10. Maximum Continuous Drain
0
1
0.1
25
10
Figure 12.
-4
f = 1 MHz
V
Figure 8.
Current vs Case Temperature
V
GS
Limited by package
GS
10
= 0 V
= 4.5 V
-3
V
50
DS
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
V
C
t, PULSE WIDTH (sec)
10
Single Pulse Maximum
Capacitance vs Drain
GS
,
CASE TEMPERATURE (
-2
= 10 V
75
1
10
-1
100
1
SINGLE PULSE
R
T
R
10
o
A
θ
θ
C )
JA
JC
= 25
125
= 2.1
= 81
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10
o
100
C
C
C
C
oss
iss
rss
o
o
C/W
C/W
1000
150
30