FDMS2510SDC Fairchild Semiconductor, FDMS2510SDC Datasheet - Page 4

• Manufacturer Part Number: FDMS2510SDC
• Description: MOSFET N-CH 20V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2510SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Forward Transconductance Gfs (max / Min): 159 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2510SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C1
Typical Characteristics
150
120
150
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
90
60
30
90
60
30
Figure 3. Normalized On Resistance
0
0
Figure 1.
1.0
-75
Figure 5. Transfer Characteristics
0
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 23 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
1.5
V
GS
T
V
V
V
1
-25
J
GS
DS
GS
On Region Characteristics
= 10 V
,
V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
GS
,
= 4.5 V
DRAIN TO SOURCE VOLTAGE (V)
= 3.5 V
2.0
T
0
J
= 125
2
25
μ
s
o
2.5
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
T
J
J
3
= -55
= 25 °C unless otherwise noted
T
3.0
J
75
= 25
o
V
C
V
GS
o
100 125 150
GS
o
C )
C
= 2.5 V
4
= 3 V
3.5
μ
s
4.0
5
4
0.001
0.01
200
100
0.1
10
10
10
8
6
4
2
0
1
8
6
4
2
0
Figure 2.
Figure 4.
0.0
0
Forward Voltage vs Source Current
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
T
= 0 V
J
V
= 2.5 V
= 125
0.2
SD
30
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
Source Voltage
o
4
Source to Drain Diode
,
C
GATE TO SOURCE VOLTAGE (V)
I
D
I
T
D
0.4
= 23 A
,
J
DRAIN CURRENT (A)
= -55
T
60
J
V
= 25
GS
o
C
= 3 V
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
6
C
T
T
J
J
= 125
V
90
= 25
GS
0.8
= 3.5 V
o
o
C
C
V
GS
8
V
120
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GS
= 4.5 V
1.0
= 10 V
μ
μ
s
s
150
1.2
10