FDMS2510SDC Fairchild Semiconductor, FDMS2510SDC Datasheet - Page 7

MOSFET N-CH 20V DUAL POWER56

FDMS2510SDC

Manufacturer Part Number
FDMS2510SDC
Description
MOSFET N-CH 20V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
Dual Cool™, PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMS2510SDC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.9 mOhm @ 23A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2780pF @ 13V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 mOhms
Forward Transconductance Gfs (max / Min)
159 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
49 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS2510SDCTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS2510SDC
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C1
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2510SDC.
25
20
15
10
-5
diode reverse recovery characteristic
5
0
Figure 14. FDMS2510SDC SyncFET body
0
50
TIME (ns)
100
(continued)
di/dt = 300 A/
150
μ
s
200
7
Schottky barrier diodes exhibit significant leakage at high temper-
ature and high reverse voltage. This will increase the power in the
device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 100
= 25
= 125
o
C
o
o
15
C
C
20
www.fairchildsemi.com
25

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