2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 3

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
2N7002_6
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
P
10
10
(%)
D
120
der
10
80
40
-1
-2
0
1
function of solder point temperature
T
P
0
1
sp
der
= 25 C; I
=
------------------------
P
tot 25 C
50
P
DM
tot
is single pulse
100 %
100
Limit R
150
DSon
T
03aa17
= V
sp
( C)
DS
/ I
200
D
Rev. 06 — 28 April 2006
10
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of solder point temperature
I
0
der
=
-------------------- -
I
D 25 C
I
50
D
V
100 %
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
DS
100
N-channel TrenchMOS FET
(V)
150
t
100 µs
10 ms
100 ms
1 ms
p
=
T
003aab350
03aa25
10 µs
sp
2N7002
( C)
10
200
2
3 of 11