2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 6
![MOSFET N-CH 60V 350MA SOT23](/photos/16/4/160412/sot23_sml.jpg)
2N7002BK,215
Manufacturer Part Number
2N7002BK,215
Description
MOSFET N-CH 60V 350MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002215.pdf
(11 pages)
Specifications of 2N7002BK,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
370mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.1V @ 250µA
Current - Continuous Drain (id) @ 25° C
350mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
300 mA
Power Dissipation
0.83 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002BK,215
Manufacturer:
NXP Semiconductors
Quantity:
9 500
Part Number:
2N7002BK,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
2N7002_6
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
0
1
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
j
0
j
= 25 C
= 25 C and 150 C; V
1
2
T
j
= 150 C
2
DS
> I
10
D
4
25 C
R
V
3
DSon
GS
V
GS
V
003aab352
003aab354
(V) =
DS
(V)
(V)
4.5
3.5
5
4
4
6
Rev. 06 — 28 April 2006
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
10000
8000
6000
4000
2000
a
2.4
1.8
1.2
0.6
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
j
0
= 25 C
=
----------------------------- -
R
DSon 25 C
R
0.2
DSon
V
0
GS
(V) =
0.4
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4
N-channel TrenchMOS FET
60
0.6
120
4.5
0.8
003aab353
T
2N7002
j
I
03aa28
D
( C)
(A)
10
5
180
1
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