STP5N62K3 STMicroelectronics, STP5N62K3 Datasheet - Page 15

• Manufacturer Part Number: STP5N62K3
• Description: MOSFET N-CH 620V 4.2A TO220AB
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP5N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Drain-source Breakdown Voltage: 620 V
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10771-5

STB/D/F/P/U5N62K3
Dim.
D1
A1
b2
E1
e1
L1
L2
V2
c2
J1
D
H
R
A
b
E
e
L
c
D²PAK (TO-263) mechanical data
Doc ID 17361 Rev 2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
mm.
Typ.
2.54
0.4
Package mechanical data
0079457_P
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
15/19