STP5N62K3 STMicroelectronics, STP5N62K3 Datasheet - Page 8
![MOSFET N-CH 620V 4.2A TO220AB](/photos/37/61/376165/to220_sml.jpg)
STP5N62K3
Manufacturer Part Number
STP5N62K3
Description
MOSFET N-CH 620V 4.2A TO220AB
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N62K3.pdf
(19 pages)
Specifications of STP5N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohms
Drain-source Breakdown Voltage
620 V
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10771-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP5N62K3
Manufacturer:
STMicroelectronics
Quantity:
500
Electrical characteristics
8/19
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
E
V
AS
GS(th)
(norm)
1.00
0.80
1.10
0.70
0.90
(V)
V
0.7
0.6
(mJ)
0.5
0.8
0.4
0.9
1.0
130
120
110
100
SD
30
20
-75
90
50
40
10
80
70
60
0
0
0
vs temperature
characteristics
starting Tj
0.2
T
J
=25°C
20
-25
0.4
40
0.6 0.8
25
60
1.0
T
J
80
=150°C
75
1.2 1.4 1.6 1.8
T
V
J
I
=-50°C
D
DD
100
=4.2 A
=50 V
125
120 140
Doc ID 17361 Rev 2
AM08597v1
AM08598v1
AM08249v1
T
J
I
SD
(°C)
T
J
(A)
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
1.00
0.95
1.05
0.90
1.10
(norm)
1.0
DSS
0.5
1.5
2.5
2.0
0
-75
-75
temperature
-25
-25
25
25
VDSS
STB/D/F/P/U5N62K3
75
75
vs temperature
125
125
AM08250v1
AM08596v1
T
T
J
J
(°C)
(°C)