STP5N62K3 STMicroelectronics, STP5N62K3 Datasheet - Page 7

• Manufacturer Part Number: STP5N62K3
• Description: MOSFET N-CH 620V 4.2A TO220AB
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP5N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Drain-source Breakdown Voltage: 620 V
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10771-5

STB/D/F/P/U5N62K3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
1000
V
100
(V)
(pF)
(A)
10
12
10
10
GS
I
C
D
6
0
6
2
8
4
2
8
4
0
1
0
0
0.1
V
DS
Output characteristics
5
5
1
10
10
V
15
DD
I
D
V
=4.2A
=496V
15
10
GS
20
=10V
20
25
100
25
30
V
GS
Q
V
DS
Doc ID 17361 Rev 2
g
V
(nC)
AM08247v1
AM08243v1
AM08245v1
DS
(V)
7V
6V
5V
500
400
100
0
300
200
Ciss
Crss
(V)
Coss
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
1.32
1.22
1.36
1.34
1.30
1.26
1.24
E
1.38
1.28
(µJ)
(A)
(Ω)
I
oss
D
7
6
5
4
3
2
0
1
2
1
4
3
0
0
0
Transfer characteristics
1.0
100
2
200
V
V
2.0
GS
DS
4
Electrical characteristics
=10V
=15V
300
6
3.0
400
500
8
4.0
AM08244v1
AM08246v1
AM08248v1
V
V
DS
GS
I
D
(A)
(V)
(V)
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