CY8C3866PVI-070 Cypress Semiconductor Corp, CY8C3866PVI-070 Datasheet - Page 104
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CY8C3866PVI-070
Manufacturer Part Number
CY8C3866PVI-070
Description
IC MCU 8BIT 64KB FLASH 48SSOP
Manufacturer
Cypress Semiconductor Corp
Series
PSOC™ 3 CY8C38xxr
Specifications of CY8C3866PVI-070
Package / Case
*
Voltage - Supply (vcc/vdd)
1.71 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Speed
67MHz
Number Of I /o
25
Eeprom Size
2K x 8
Core Processor
8051
Program Memory Type
FLASH
Ram Size
8K x 8
Program Memory Size
64KB (64K x 8)
Data Converters
A/D 2x20b, D/A 4x8b
Oscillator Type
Internal
Peripherals
CapSense, DMA, LCD, POR, PWM, WDT
Connectivity
CAN, EBI/EMI, I²C, LIN, SPI, UART/USART
Core Size
8-Bit
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Technology
CMOS
Processing Unit
Microcontroller
Operating Supply Voltage (min)
1.8V
Operating Supply Voltage (typ)
2.5/3.3/5V
Operating Supply Voltage (max)
5.5V
Package Type
SSOP
Screening Level
Industrial
Pin Count
48
Mounting
Surface Mount
Rad Hardened
No
Processor Series
CY8C38
Core
8051
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
I2C, SPI, UART, USB
Maximum Clock Frequency
67 MHz
Number Of Programmable I/os
28 to 72
Number Of Timers
4
Operating Supply Voltage
0.5 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Controller Family/series
(8051) PSOC 3
No. Of I/o's
25
Eeprom Memory Size
2KB
Ram Memory Size
8KB
Cpu Speed
67MHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY8C3866PVI-070
Manufacturer:
CYPRESS厂技术支持
Quantity:
20 000
11.4.2 EEPROM
Table 11-60. EEPROM DC Specifications
Table 11-61. EEPROM AC Specifications
11.4.3 Nonvolatile Latches (NVL))
Table 11-62. NVL DC Specifications
Table 11-63. NVL AC Specifications
11.4.4 SRAM
Table 11-64. SRAM DC Specifications
Table 11-65. SRAM AC Specifications
Document Number: 001-11729 Rev. *R
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Erase and program voltage
Single row erase/write cycle time
EEPROM data retention time,
retention period measured from last
erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Description
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
V
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
DDD
pin
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
A
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
1.71
Min
1.71
Min
Min
Min
100
Min
Min
DC
1.2
1K
20
20
20
20
10
–
PSoC
Typ
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
2
–
–
–
®
3: CY8C38 Family
67.01
Max
Max
Max
Max
Max
Max
5.5
5.5
20
–
–
–
–
–
–
–
–
program/erase cycles
program/erase cycles
Data Sheet
Page 104 of 129
Units
Units
Units
years
Units
years
years
Units
Units
MHz
ms
V
V
V
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