BGM1012,115 NXP Semiconductors, BGM1012,115 Datasheet - Page 3

• Manufacturer Part Number: BGM1012,115
• Description: IC MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGM1012,115

• Noise Figure: 4.8dB
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 14.6mA
• Frequency: 0Hz ~ 4GHz
• Gain: 20.1dB
• P1db: 9.7dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 3V ~ 4V
• Bandwidth: 3600 MHz
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Supply Voltage: 3 V
• Supply Current: 19 mA @ 3 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3549-2; 934056906115; BGM1012 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2002 Sep 06
V
I
P
T
T
P
R
S
SYMBOL
SYMBOL
stg
j
S
tot
D
MMIC wideband amplifier
th j-s
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
thermal resistance from junction to
solder point
PARAMETER
PARAMETER
RF input AC coupled
T
P
s
tot
3
 90 C
= 200 mW; T
CONDITIONS
CONDITIONS
s
 90 C



65


MIN.
Product specification
4
50
200
+150
150
10
VALUE
BGM1012
MAX.
300
V
mA
mW
C
C
dBm
UNIT
UNIT
K/W