BGM1012,115 NXP Semiconductors, BGM1012,115 Datasheet - Page 5

• Manufacturer Part Number: BGM1012,115
• Description: IC MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGM1012,115

• Noise Figure: 4.8dB
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 14.6mA
• Frequency: 0Hz ~ 4GHz
• Gain: 20.1dB
• P1db: 9.7dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 3V ~ 4V
• Bandwidth: 3600 MHz
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Supply Voltage: 3 V
• Supply Current: 19 mA @ 3 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3549-2; 934056906115; BGM1012 T/R

NXP Semiconductors
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 , and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be
increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
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MMIC wideband amplifier
RF input
V s
Fig.2 Typical application circuit.
C1
C2
RF in
GND1
V s
GND2
RF out
L1
C3
RF output
MGU436
5
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
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antenna
from modulation
input
from RF
or IF circuit
Fig.3 Easy cascading application circuit.
circuit
Fig.6 Application as driver amplifier.
DC-block
100 pF
Fig.5 Application as RF amplifier.
Fig.4 Application as IF amplifier.
oscillator
LNA
oscillator
mixer
mixer
wideband
amplifier
oscillator
DC-block
100 pF
wideband
amplifier
mixer
wideband
amplifier
Product specification
BGM1012
DC-block
100 pF
to IF circuit
or demodulator
to IF circuit
or demodulator
to power
amplifier
MGU438
MGU440
MGU439
MGU437
output