MGA-634P8-BLKG Avago Technologies US Inc., MGA-634P8-BLKG Datasheet - Page 2

• Manufacturer Part Number: MGA-634P8-BLKG
• Description: IC LNA ULTRA LOW NOISE ACT BIAS
• Manufacturer: Avago Technologies US Inc.
• Type: High Linearity Low Noise Amplifierr

Specifications of MGA-634P8-BLKG

• Package / Case: 8-WFDFN Exposed Pad
• Current - Supply: 48mA
• Frequency: 1.5GHz ~ 2.3GHz
• Gain: 17.4dB
• Noise Figure: 0.44dB
• P1db: 21dBm
• Rf Type: CDMA, GSM
• Test Frequency: 1.9GHz
• Voltage - Supply: 5V
• Mounting Style: SMD/SMT
• Operating Frequency: 1.5 GHz to 2.3 GHz
• Operating Supply Voltage: 5 V
• Supply Current: 50 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Manufacturer's Type: Low Noise Amplifier
• Number Of Channels: 1
• Frequency (max): 1.9GHz
• Operating Supply Voltage (max): 5.5V
• Package Type: QFN EP
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Rating
Electrical Specifi cations
RF performance at T
listed in Table 1 for 1.9 GHz matching.
Notes:
1. Measurements at 1.9 GHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application
2
Symbol
V
V
P
P
T
T
T
Symbol
I
Gain
OIP3
NF
OP1dB
IRL
ORL
REV ISOL
dd
stg
amb
diss
j
dd
bias
in,max
note for more details.
[3]
[2]
Parameter
Device Voltage,
RF output to ground
Gate Voltage
CW RF Input Power
(V
Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
dd
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Input Return Loss, 50 source
Output Return Loss, 50 load
Reverse Isolation
Noise Figure
= 5.0V, I
A
RF1
= 25°C, V
= 1.9 GHz, F
d
[1], [4]
[1]
= 50 mA)
T
A
=25°C
dd
RF2
= 5V, R
[2]
= 1.901 GHz with input power of -10dBm per tone.
bias
= 5.6 kOhm, 1.9 GHz, measured on demo board in Figure 1 with component
Units
V
V
dBm
W
°C
°C
°C
Absolute Maximum
5.5
0.7
+20
0.5
150
-65 to 150
-40 to 85
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Power dissipation with device turned on.
3. Thermal resistance measured using Infra-Red
Thermal Resistance
(V

jc
dd
these limits may cause permanent damage.
Board temperature T
16mW/°C for T
Measurement Technique
= 62°C/W
= 5.0V, I
Min.
37
16.1
33
dd
= 50mA)
B
>119°C.
Typ.
48
17.4
36
0.44
21
15.5
13
30
[3]
B
is 25°C. Derate at
Max.
61
19.1
0.69