AMMP-5618-TR1 Avago Technologies US Inc., AMMP-5618-TR1 Datasheet - Page 2

• Manufacturer Part Number: AMMP-5618-TR1
• Description: IC AMP GP HI PWR 6-20GHZ 8-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AMMP-5618-TR1

• Gain: 13dB
• Current - Supply: 107mA ~ 140mA
• Frequency: 6GHz ~ 20GHz
• Noise Figure: 4.4dB
• P1db: 19dBm
• Package / Case: 8-QFN
• Rf Type: ISM, MMDS, WLL, 802.16/WiMAX, DBS, VSAT
• Voltage - Supply: 5V
• Frequency Range: 6GHz To 20GHz
• Noise Figure Typ: 4.4dB
• Supply Current: 107mA
• Supply Voltage Range: 5V
• Rf Ic Case Style: SMD
• No. Of Pins: 8
• Frequency Max: 20GHz
• Termination Type: SMD
• Number Of Channels: 1
• Frequency (max): 20GHz
• Operating Supply Voltage (typ): 5V
• Package Type: SMD
• Mounting: Surface Mount
• Pin Count: 8
• Noise Figure (typ): 4.4dB
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

AMMP-5618 DC Specifications/Physical Properties
Symbol
I
θ
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (T
RF Specifications
Symbol
Gain
NF
P
OIP3
RLin
RLout
Isol
Notes:
3. Small/Large -signal data measured in a fully de-embedded test fixture form T
4. Pre-assembly into package performance verified 100% on-wafer per AMMC-5618 published specifications
5. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
6. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a more
2
d
-1dB
ch-b
ture (T
narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.
b
) = 25°C calculated from measured data.
Parameters and Test Conditions
Drain Supply Current (under any RF power drive and temperature) (V
Thermal Resistance
[3,4,6]
Parameters and Test Conditions
Small-signal Gain
Noise Figure into 50Ω
Output Power at 1 dB Gain Compression
Third Order Intercept Point;
∆f = 100 MHz; Pin = -20 dBm
Input Return Loss
Output Return Loss
Reverse Isolation
(T
A
= 25°C, V
d
= 5.0V, I
[2]
[5]
(Backside temperature, T
A
[5]
= 25°C unless otherwise noted.
d(Q)
= 107 mA, Z
channel
(T
c
) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside tempera-
o
=50 Ω)
[1]
b
= 25°C)
Units
dB
dB
dBm
dBm
dB
dB
dB
A
= 25°C.
d
=5.0V)
Typ.
13
4.4
+19
+30
-12
-12
-40
Units
mA
°C/W
Sigma
0.4
0.2
0.9
1.2
0.7
0.6
1.2
Min.
Typ.
107
34
Max.
140