MBC13916NT1 Freescale Semiconductor, MBC13916NT1 Datasheet - Page 3

• Manufacturer Part Number: MBC13916NT1
• Description: TRANS RF NPN LO NOISE SOT-343
• Manufacturer: Freescale Semiconductor
• Type: General Purpose Amplifierr

Specifications of MBC13916NT1

• Current - Supply: 20mA
• Frequency: 100MHz ~ 2.5GHz
• Gain: 16.5dB
• Noise Figure: 1.9dB
• P1db: 2.5dBm
• Package / Case: SOT-343R
• Rf Type: General Purpose
• Test Frequency: 1.9GHz
• Voltage - Supply: 2.7V ~ 5V
• Number Of Channels: 1
• Operating Frequency: 2500 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 5.6 mA @ 2.7 V
• Maximum Power Dissipation: 100 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Technology: Low Noise Amplifier
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 2.5GHz
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (typ): 3V
• Operating Supply Voltage (max): 5V
• Package Type: SOT-343R
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Noise Figure (typ): 2.1@1900MHzdB
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBC13916NT1; MBC13916NT1TR

Freescale Semiconductor
Thermal Resistance, Junction-to-Case
Note: To calculate the junction temperature use T
OFF Characteristic
Collector-Emitter Breakdown Voltage (I
Collector-Base Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
Base Cutoff Current (V
ON Characteristic
DC Current Gain (V
Dynamic Characteristics
Current Gain Bandwidth Product
Performance Characteristic
Insertion Gain
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
Minimum Noise Figure
Associated Gain at Minimum Noise Figure
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
lead adjacent to the package body.
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
= 2.0 V, I
= 2.0 V, I
= 3.0 V, I
= 3.0 V, I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 15 mA, f = 0.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
= 5.0 mA, f = 0.9 GHz)
= 5.0 mA, f = 1.9 GHz)
= 3.0 mA, f = 0.9 GHz)
= 3.0 mA, f = 1.9 GHz)
1
CE
1
Characteristic
CE
= 2.0 V, I
Characteristic
EB
= 5.0 V, I
CB
= 2.0 V, I
= 7.0 V, I
C
= 5.0 mA)
B
E
C
= 0)
C
= 0.1 mA, I
Table 4. Electrical Characteristics
E
= 0)
C
= 0.1 mA, I
MBC13900 Technical Data, Rev. 1.1
Table 3. Thermal Characteristic
= 0)
= 0.1 mA, I
C
J
E
= 0)
= (P
B
= 0)
= 0)
D
x R
MSG, MAG
θJC
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
|S
NF
I
I
I
G
) + T
h
CBO
EBO
CEO
f
21
FE
NF
τ
min
|
2
C
. The case temperature measured on collector
Symbol
R
θJC
18.5
13.5
16.5
12.5
17.5
Min
100
6.5
8.0
3.0
22
18
21
-
-
-
-
-
-
-
-
-
-
-
-
19.5
14.5
17.5
13.5
18.5
Typ
7.5
4.0
0.8
0.9
0.8
0.9
12
15
23
19
22
22
16
21
15
-
-
-
-
Max
400
Electrical Specifications
Max
200
0.1
0.1
0.1
0.9
1.1
0.9
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
Unit
GHz
Unit
Vdc
Vdc
Vdc
µA
µA
µA
dB
dB
dB
dB
-
3