APT150GT120JR Microsemi Power Products Group, APT150GT120JR Datasheet

IGBT 1200V 170A 830W SOT227

APT150GT120JR

Manufacturer Part Number
APT150GT120JR
Description
IGBT 1200V 170A 830W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet
1.APT150GT120JR.pdf (6 pages)

Specifications of APT150GT120JR

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
170A
Current - Collector Cutoff (max)
150µA
Input Capacitance (cies) @ Vce
9.3nF @ 25V
Power - Max
830W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT150GT120JRMI
APT150GT120JRMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT150GT120JR
Manufacturer:
APT
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT150GT120JR
Quantity:
114
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT150GT120JRDQ4
Manufacturer:
IXYS
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT150GT120JRDQ4
Quantity:
120
The Thunderbolt IGBT
Punch-Through Technology, the Thunderbolt IGBT
ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
• RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
Low EMI, High Reliability
T
V
V
V
SSOA
R
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
G(int)
CM
CES
C1
C2
GE
D
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Integrated Gate Resistor
®
is a new generation of high voltage power IGBTs. Using Non-
Thunderbolt IGBT
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
= V
= 1200V, V
= 1200V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
, I
= 100°C
= 25°C
J
= ±20V)
= 150°C
C
= 6mA, T
®
GE
offers superior ruggedness and
GE
GE
C
C
= 0V, I
= 150A, T
= 150A, T
= 0V, T
= 0V, T
®
j
= 25°C)
C
= 4mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
C
1200V, 150A, V
= 25°C unless otherwise specified.
1200
Min
1.75
4.5
2.7
APT150GT120JR
-
-
-
-
-55 to 150
Ratings
ISOTOP
1200
±20
170
450
450
830
90
Typ
5.5
3.2
4.0
2
-
-
-
-
CE(ON)
®
.
"UL Recognized"
file # E145592
Max
TBD
3.25
150
900
6.5
3.7
= 3.2V Typical
-
-
Amps
Unit
Volts
Watts
Unit
Volts
°C
μA
nA
Ω

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APT150GT120JR Summary of contents

Page 1

... T = 125° 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT150GT120JR 1200V, 150A 3.2V Typical CE(ON) "UL Recognized" ISOTOP ® file # E145592 = 25°C unless otherwise specified. C Ratings Unit 1200 Volts ±20 170 90 Amps 450 450 830 Watts -55 to 150 ° ...

Page 2

... T = 150° 100μ 1200V CE Inductive Switching (25° 800V 15V 150A 2.2Ω +25° Inductive Switching (125° 800V 15V 150A 2.2Ω 125° APT150GT120JR Min Typ Max - 9300 - - 1400 - - 700 - - 995 - - 110 - - 595 - , V = 15V, GE 450 - N 570 - - TBD - 24 ...

Page 3

... I = 300A 150A 75A FIGURE 6, On State Voltage vs Junction Temperature 150 125 100 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT150GT120JR 17V 15V 13V 12V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE ( 25° 15- 25° 240V 600V 960V CE 0 200 400 600 800 ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 120 100 300A off 150A off, E 75A on2, E 75A 0 off FIGURE 16, Switching Energy Losses vs Junction Temperature APT150GT120JR V =15V,T =125° =15V,T =25° 800V CE 2.2Ω 100µH 50 100 150 200 250 300 , COLLECTOR-TO-EMITTER CURRENT (A) 2.2Ω, L ...

Page 5

... FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE 0.1 RECTANGULAR PULSE DURATION (SECONDS (° .0282 10 12. COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT150GT120JR 0 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ ° 125 C J ° T ...

Page 6

... SOT-227 (ISOTOP ® ) Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches ) APT150GT120JR 10% Gate Voltage T = 125° d(on) 90% t Collector Current r 5% 10% 5% Collector Voltage Switching Energy 11 ...

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