APT150GT120JR Microsemi Power Products Group, APT150GT120JR Datasheet - Page 3

IGBT 1200V 170A 830W SOT227

APT150GT120JR

Manufacturer Part Number
APT150GT120JR
Description
IGBT 1200V 170A 830W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT150GT120JR

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
170A
Current - Collector Cutoff (max)
150µA
Input Capacitance (cies) @ Vce
9.3nF @ 25V
Power - Max
830W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT150GT120JRMI
APT150GT120JRMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT150GT120JR
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT150GT120JR
Quantity:
114
Part Number:
APT150GT120JRDQ4
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
APT150GT120JRDQ4
Quantity:
120
Typical Performance Curves
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
FIGURE 7, Threshold Voltage vs Junction Temperature
350
300
250
200
150
100
350
300
250
200
150
100
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
50
50
6
5
4
3
2
1
0
-.50 -.25
0
0
FIGURE 1, Output Characteristics (T
V
0
8
0
CE
V
<0.5 % DUTY CYCLE
GE
250µs PULSE TEST
TEST<0.5 % DUTY
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
1
GE
2
J
T
CYCLE
= 125°C
, GATE-TO-EMITTER VOLTAGE (V)
J
T
T
= 25°C.
, GATE-TO-EMITTER VOLTAGE (V)
T
J
J
= 25°C
, JUNCTION TEMPERATURE
J
10
= 125°C
2
0
T
4
J
T
= 25°C
J
= -55°C
25
3
6
12
4
50
8
75
5
T
10
J
100 125
= 150°C
14
I
6
C
I
C
I
= 150A
C
= 300A
12
J
= 75A
7
= 25°C)
150
14
16
8
150
125
FIGURE 8, DC Collector Current vs Case Temperature
100
350
300
250
200
150
100
FIGURE 6, On State Voltage vs Junction Temperature
20
18
16
14
12
10
75
50
25
50
8
6
4
2
0
0
7
6
5
4
3
2
1
0
0
FIGURE 2, Output Characteristics (T
V
25
0
0
CE
0
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
T
C
, COLLECTOR-TO-EMITTER VOLTAGE (V)
J
= 15-0A
= 25°C
17V
200
V
25
GE
5
50
= 15V.
T
T
J
15V
, Junction Temperature (°C)
C
FIGURE 4, Gate charge
V
13V
, Case Temperature (°C)
CE
GATE CHARGE (nC)
400
10
50
V
= 600V
12V
CE
75
= 240V
600
75
15
11V
100
100
800
20
10V
I
V
C
I
C
I
CE
C
1000
= 300A
125
= 150A
125
= 75A
J
APT150GT120JR
25
= 960V
9V
= 25°C)
8V
1200
150
30
150

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