APT150GT120JR Microsemi Power Products Group, APT150GT120JR Datasheet - Page 2

• Manufacturer Part Number: APT150GT120JR
• Description: IGBT 1200V 170A 830W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT150GT120JR

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 170A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 830W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GT120JRMI; APT150GT120JRMI

Dynamic Characteristics
Thermal and Mechanical Characteristics
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Symbol Characteristic / Test Conditions
SSOA
Torque
V
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
V
t
t
t
t
E
E
E
E
C
C
C
Q
Q
R
d(on)
d(off)
E
d(on)
d(off)
E
Isolation
Q
on1
on2
off
··t
G
W
GEP
t
on1
on2
t
t
on1
on2
oes
res
θ
ies
ge
off
off
gc
f
r
f
g
is external gate resistance not including gate driver impedance.
r
JC
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
T
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Junction to Case
Package Weight
Terminals and Mounting Screws.
RMS Voltage
ces
includes both IGBT and FRED leakages.
(50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
6
6
4
5
5
4
T
J
= 150°C, R
Inductive Switching (125°C)
Inductive Switching (25°C)
L = 100μH, V
V
GE
Test Conditions
Gate Charge
= 0V, V
V
T
V
T
V
V
V
R
V
R
I
I
I
f = 1MHz
J
J
CC
CC
C
C
C
CE
G
GE
GE
GE
G
G
= +25°C
= 125°C
= 150A
= 150A
= 150A
= 1.0Ω
= 600V
= 2.2Ω
= 2.2Ω
= 800V
= 800V
= 15V
= 15V
= 15V
CE
CE
= 1200V
= 25V
7
, V
GE
= 15V,
2500
Min
450
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9300
1400
TBD
TBD
24.3
12.7
33.5
14.8
Typ
700
995
110
595
N/A
570
165
635
10
80
70
80
75
29.2
Typ
-
-
-
-
APT150GT120JR
Max
Max
0.15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
10
-
-
Unit
°C/W
Unit
Volts
in·lbf
nC
mJ
mJ
pF
N·m
ns
ns
gm
V
A