APT150GT120JR Microsemi Power Products Group, APT150GT120JR Datasheet - Page 5

• Manufacturer Part Number: APT150GT120JR
• Description: IGBT 1200V 170A 830W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT150GT120JR

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 170A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 830W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GT120JRMI; APT150GT120JRMI

Dissipated Power
Typical Performance Curves
(Watts)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
100,000
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10,000
1,000
100
V
0.08
0.14
0.12
0.06
0.16
0.04
0.02
0.1
CE
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
0 100 200 300 400 500 600 700 800 900
10
T
J
-4
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
(°C)
.0175
D = 0.9
.0315
0.5
0.7
0.05
0.3
0.1
10
.7078
.0897
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
-3
are the external thermal
12.16
RECTANGULAR PULSE DURATION (SECONDS)
.0282
SINGLE PULSE
T
C
C
C
(°C)
10
ies
res
-2
C
oes
10
-1
Figure 20, Operating Frequency vs Collector Current
30
25
20
15
10
5
0
0 10
500
400
300
200
100
I
FIGURE 18, Minimum Switching Safe Operating Area
0.1
C
20
, COLLECTOR CURRENT (A)
0
0
V
30 40 50
CE
200
, COLLECTOR-TO-EMITTER VOLTAGE
Note:
100°C
Peak T J = P DM x Z θJC + T C
75°C
Duty Factor D =
400
60 70
t 1
1
600
t 2
T
T
D = 50 %
V
R
J
C
CE
80 90 100
G
800 1000 1200 1400
t 1
= 125
= 75
= 4.7Ω
/
t 2
= 800V
°
°
C
C
10
APT150GT120JR
F
f
f
P
max1
max2
max
diss
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
off
+ t
max2
d(off)
)
+ t
f