CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 2

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

CPV364M4KPbF
Vishay High Power Products
Notes
(1)
(2)
www.vishay.com
2
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
Weight of module
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown voltage ΔV
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
Pulse width 5.0 µs; single shot
For technical questions, contact: [e-mail]
ΔV
V
SYMBOL
(BR)CES
(BR)CES
V
V
GE(th)
g
I
I
CE(on)
V
GE(th)
fe
CES
GES
FM
(2)
J
/ΔT
= 25 °C unless otherwise specified)
/ΔT
(1)
(Short Circuit Rated
J
J
IGBT SIP Module
Ultrafast IGBT)
R
V
V
I
I
I
V
V
V
V
I
I
V
C
C
C
C
C
R
GE
GE
CE
CE
GE
GE
GE
thCS
R
= 13 A
= 24 A
= 13 A, T
= 15 A
= 15 A, T
thJC
SYMBOL
thJC
= V
= 100 V, I
= 0 V, I
= 0 V, I
= 0 V, V
= 0 V, V
= ± 20 V
(MODULE)
(DIODE)
(IGBT)
GE
TEST CONDITIONS
, I
J
J
C
C
C
CE
CE
= 150 °C
= 250 µA
= 1.0 mA
= 150 °C
= 250 µA
C
= 600 V
= 600 V, T
= 10 A
J
V
See fig. 2, 5
See fig. 13
TYP.
0.10
= 150 °C
0.7
20
GE
-
-
= 15 V
MIN.
600
3.0
11
-
-
-
-
-
-
-
-
-
-
MAX.
2.2
3.7
-
-
-
TYP.
0.63
1.80
1.80
1.56
Document Number: 94488
- 13
1.3
1.2
18
-
-
-
-
-
Revision: 01-Sep-08
MAX.
± 100
3500
1.73
250
2.3
6.0
1.7
1.6
-
-
-
-
-
UNITS
°C/W
oz.
g
UNITS
mV/°C
V/°C
µA
nA
V
V
S
V