CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 3

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

Document Number: 94488
Revision: 01-Sep-08
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery charge
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
For technical questions, contact: [e-mail]
SYMBOL
dI
(rec)M
t
t
t
t
C
C
Q
Q
C
d(on)
d(off)
E
E
d(on)
d(off)
Q
Q
E
E
L
t
I
t
t
t
t
t
oes
res
on
off
sc
ies
rr
rr
ge
gc
r
r
f
ts
f
ts
rr
g
E
/dt
J
(Short Circuit Rated
= 25 °C unless otherwise specified)
IGBT SIP Module
I
V
V
See fig. 8
T
I
V
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
V
V
T
I
V
Energy losses include “tail” and
diode reverse recovery
Measured 5 mm from package
V
V
ƒ = 1.0 MHz
See fig. 7
T
T
T
T
T
T
T
T
Ultrafast IGBT)
C
C
C
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
CC
GE
GE
GE
CC
= 13 A
= 13 A, V
= 13 A, V
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 150 °C, see fig. 9, 10, 11, 18
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 15 V
= 400 V
= 15 V, R
= 360 V,T
= 15 V, R
= 15 V, R
= 0 V
= 30 V
TEST CONDITIONS
CC
CC
G
G
G
J
See fig. 14
See fig. 15
See fig. 16
See fig. 17
= 480 V
= 480 V
= 125 °C
= 10 Ω
= 10 Ω, V
= 10 Ω
CPK
I
V
dI/dt = 200 A/µs
F
< 500 V
R
= 15 A
= 200 V
Vishay High Power Products
MIN.
CPV364M4KPbF
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
1600
0.56
0.28
0.84
1.28
110
110
250
150
130
220
188
160
7.5
4.0
6.5
14
49
50
30
91
47
30
55
42
74
80
-
MAX.
www.vishay.com
170
170
140
120
180
600
1.1
6.0
21
74
60
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
A/µs
nC
mJ
mJ
nH
nC
pF
ns
µs
ns
ns
A
3