CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 5

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

Document Number: 94488
Revision: 01-Sep-08
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
3000
2500
2000
1500
1000
500
20
16
12
8
4
0
0
0
1
V
I
CC
C
= 400V
= 13A
20
V
0.01
Q , Total Gate Charge (nC)
CE
0.1
10
0.00001
G
1
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
D = 0.50
40
C res
C ies
C oes
0.20
0.10
0.02
0.01
=
=
=
=
0.05
0V,
C
C
C
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case
ge
gc
ce
60
+ C
+ C
10
f = 1MHz
gc ,
gc
(THERMAL RESPONSE)
0.0001
80
SINGLE PULSE
For technical questions, contact: [e-mail]
C
ce
SHORTED
100
120
100
t , Rectangular Pulse Duration (sec)
(Short Circuit Rated
0.001
1
IGBT SIP Module
Ultrafast IGBT)
0.01
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Notes:
1. Duty factor D = t / t
2. Peak T = P
0.1
1.5
1.0
0.5
0.1
10
1
-60 -40 -20
0
R
V
V
V
V
T
Vishay High Power Products
J
I
GE
CC
J
C
G
CC
GE
DM
= 25
= 15V
= 480V
= 480V
= 15V
= Ohm
= 13A
10Ω
T , Junction Temperature ( C )
R , Gate Resistance (Ω)
x Z
10
J
1
G
thJC
°
0
2
C
P
1
DM
+ T
20
20
C
CPV364M4KPbF
t
1
40 60
t 2
30
80 100 120 140 160
10
I =
I =
I =
C
C
C
°
40
6.5
26
13
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A
A
A
50
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