GA200TS60U Vishay, GA200TS60U Datasheet

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GA200TS60U

Manufacturer Part Number
GA200TS60U
Description
IGBT FAST 600V 200A INT-A-PAK
Manufacturer
Vishay
Datasheets

Specifications of GA200TS60U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
20.068nF @ 30V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant

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Company
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Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
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Manufacturer:
Semikron
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Part Number:
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Quantity:
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Document Number: 94545
Revision: 04-May-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
V
CE(on)
at 200 A, 25 °C
I
V
C
CES
DC
INT-A-PAK
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
For technical questions, contact:
ΔV
SYMBOL
1.74 V
SYMBOL
600 V
265 A
V
V
V
GE(th)
V
BR(CES)
V
I
J
CE(on)
I
V
V
GE(th)
I
I
I
g
CES
GES
P
CM
ISOL
CES
I
LM
FM
FM
GE
C
= 25 °C unless otherwise specified)
fe
D
/ΔT
J
T
T
Any terminal to case, t = 1 min
T
T
V
V
V
I
V
V
V
V
I
I
V
C
C
C
C
C
C
C
GE
GE
GE
CE
CE
GE
GE
GE
= 0.25 mA
= 200 A, V
= 200 A, V
= 25 °C
= 67 °C
= 25 °C
= 85 °C
= V
= 20 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 0 V, V
= 0 V, V
= ± 20 V
TEST CONDITIONS
TEST CONDITIONS
GE
, I
C
C
CE
CE
C
C
C
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Low EMI, requires less snubbing
GE
GE
= 1 mA
indmodules@vishay.com
= 0.25 mA
= 200 A
= 200 A
= 200 A, T
40 kHz in hard switching, > 200 kHz in resonant
mode
SMPS, welding
= 600 V
= 600 V, T
= 0 V
= 0 V, T
J
J
= 125 °C
J
= 125 °C
®
= 125 °C
antiparallel diodes with ultrasoft recovery
Vishay High Power Products
MIN.
600
3
-
-
-
-
-
-
-
-
-
GA200TS60UPbF
MAX.
2500
± 20
600
265
200
400
400
400
625
325
0.014
TYP.
1.74
1.79
- 11
220
4.4
4.2
4.4
-
-
-
MAX.
± 250
2.25
2.2
6.0
6.2
10
www.vishay.com
6
1
-
-
-
UNITS
W
V
A
V
UNITS
mV/°C
mA
nA
V
S
V
1

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GA200TS60U Summary of contents

Page 1

... CES 600 200 200 ± GES GE For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products ® antiparallel diodes with ultrasoft recovery MAX. 600 265 200 400 400 400 ± 20 2500 625 325 MIN. TYP. MAX. 600 - - - 1.74 2.2 = 125 ° ...

Page 2

... GA200TS60UPbF Vishay High Power Products SWITCHING CHARACTERISTICS (T PARAMETER Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Turn-on delay time Rise time ...

Page 3

... Fig Typical Load Current vs. Frequency (Load Current = I of Fundamental) RMS 2.0 2.5 Fig Case Temperature vs. Maximum Collector Current 8.0 9.0 For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products For both: Duty cycle 125 ° °C sink Gate drive as specified Power Dissipation = ...

Page 4

... GA200TS60UPbF Vishay High Power Products 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 1E-005 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction to Case 400 135 200 400 600 Q - Total gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Voltage 360 125 ° ...

Page 5

... Revision: 04-May-10 "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A 5. 6.0 2000 /dt F For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products 20000 15000 400 A, 125 °C 200 A, 125 °C 10000 100 A, 125 °C 400 A, 25 °C 200 A, 25 °C 5000 100 A, 2 5° ...

Page 6

... GA200TS60UPbF Vishay High Power Products Fig. 15a - Test Circuit for Measurement off(diode d(on) 90% Vge +Vge Vce 90% Ic 10% Vce Ic Ic td(off Fig. 15b - Test Waveforms for Circuit of Fig. 18a, Defining off d(off) www.vishay.com 6 "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 d(off t1+5µS ...

Page 7

... Current rating (200 = 200 A) - Circuit configuration (T = Half bridge) - INT-A-PAK - Voltage code (60 = 600 V) - Speed/type (U = Ultrafast IGBT) - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products 480V @25° 480V Fig Pulsed Collector Current Test Circuit U PbF www.vishay.com/doc?95173 www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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