GA200TS60U Vishay, GA200TS60U Datasheet - Page 2

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

GA200TS60UPbF
Vishay High Power Products
www.vishay.com
2
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
Case to sink per module
Mounting torque
Weight
case to terminal 1, 2, 3
case to heatsink
Diode
IGBT
For technical questions, contact:
b
SYMBOL
SYMBOL
dI
(rec)M
R
"Half-Bridge" IGBT INT-A-PAK
R
t
t
t
t
C
(Ultrafast Speed IGBT), 200 A
C
T
Q
Q
C
J
d(off)
E
E
d(off)
E
E
d(on)
d(on)
Q
Q
E
E
T
thCS
t
thJC
I
t
t
t
t
Stg
oes
on
off
on
off
ies
res
rr
ge
gc
rr
r
f
ts
r
f
ts
= 25 °C unless otherwise specified)
J
g
rr
/dt
I
I
V
I
V
V
T
R
R
I
V
V
T
R
R
V
V
f = 1.0 MHz
I
V
dI/dt = 1300 A/μs
C
C
C
C
C
J
J
GE
CC
GE
g1
g2
CC
GE
g1
g2
GE
CC
CC
= 200 A
= 270 A
= 200 A
= 200 A
= 200 A
= 25 °C
= 125 °C
= 15 Ω
= 0 Ω
= 15 Ω
= 0 Ω
= 15 V
= ± 15 V
= ± 15 V
= 0 V
= 360 V
= 360 V
= 30 V
= 360 V
MIN.
- 40
- 40
TEST CONDITIONS
-
-
-
-
-
-
[e-mail]
TYP.
200
0.1
-
-
-
-
-
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20 068
10 714
TYP.
1254
1922
900
125
306
220
154
300
180
342
194
366
213
261
179
120
2.2
6.6
8.8
16
21
Document Number: 94545
5
MAX.
150
125
0.2
0.4
4
3
-
-
Revision: 04-May-10
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
°C/W
A/μs
Nm
nC
mJ
mJ
μC
pF
°C
ns
ns
ns
A
g