GA200TS60U Vishay, GA200TS60U Datasheet - Page 5

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 94545
Revision: 04-May-10
20000
15000
10000
5000
1000
100
10
Fig. 11 - Typical Forward Voltage Drop vs.
0
Fig. 12 - Typical Stored Charge vs. dI
500
1.0
Instantaneous Forward Current
400 A, 125 °C
V
2.0
FM
- Forward Voltage Drop (V)
1000
dI
200 A, 125 °C
F/
3.0
100 A, 125 °C
dt (A/µs)
400 A, 25 °C
T = 25 °C
4.0
T = 125 °C
J
J
200 A, 25 °C
1500
100 A, 25 °C
For technical questions, contact:
5.
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
6.0
2000
F
/dt
[e-mail]
Fig. 13 - Typical Reverse Recovery Time vs. dI
20000
15000
10000
5000
250
200
150
100
Fig. 14 - Typical Reverse Recovery vs. dI
50
0
0
500
500
Vishay High Power Products
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
400 A, 125 °C
1000
1000
dI
200 A, 125 °C
F/
dI
GA200TS60UPbF
100 A, 125 °C
dt (A/µs)
F/
400 A, 25 °C
dt (A/µs)
200 A, 25 °C
1500
1500
100 A, 2 5°C
400 A, 25 °C
200 A, 25 °C
100 A, 25 °C
2000
2000
www.vishay.com
F
/dt
F
/dt
5