GA200TS60U Vishay, GA200TS60U Datasheet
GA200TS60U
Specifications of GA200TS60U
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GA200TS60U Summary of contents
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... Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA200TS60U Ultra-Fast V @V Max. 600 200 400 400 400 ±20 2500 625 325 -40 to +150 -40 to +125 Typ ...
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... GA200TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th) J Forward Transconductance Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 10 = 15V 1 2.5 3.0 5.0 Fig Typical Transfer Characteristics GA200TS60U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 120 ° 125 C ...
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... GA200TS60U 240 200 160 120 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 cta tio 15V I = 400 ...
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... Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 1000 R = 100 -60 -40 -20 Fig Typical Switching Losses vs. GA200TS60U = 400V = 135A 200 400 600 800 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 360V 400 200 100 100 120 140 160 ° Junction Temperature ( C ) ...
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... GA200TS60U Ohm 125 C ° 360V 15V 100 200 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 5°C J 100 ° 1.0 2.0 3.0 4.0 5 lta rop - Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 300 400 6 Fig Typical Stored Charge vs 20V = 125° ...
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... ° 5° / /µ Fig Typical Reverse Recovery vs. di www.irf.com /dt Fig Typical Recovery Current vs GA200TS60U ° 5° /µ ...
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... GA200TS60U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...
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... Figure 17e. Macro Waveforms for µ Figure 18. www.irf.com Figure 18a's D.U. 480V Figure 19. Pulsed Collector Current GA200TS60U Test Circuit 480V @25°C C Test Circuit 9 ...
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... GA200TS60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T For screws M5. U Pulse width 50µs; single shot. Case Outline — INT-A-PAK [ 80.30 3.161 79.70 3.138 34.70 1.366 33.70 1.327 [.314] MAX. 0.15 [.0059] CONVEX 92 ...