FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 116

• Manufacturer Part Number: FMS6G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G15US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
KSP2907A
KSA708
PN3645
PN4355
PN2907A
KSB1116A
BC638
MPS751
BC556
KSP56
MPSA56
KSP8599
PN4356
BC640
MPSL51
KSA992
2N5400
KSA910
2N5401
KSA709
MPSA93
KSP93
2N6518
KSP92
MPSA92
2N6519
2N6520
KSP94
KSA1625
TO-92L NPN Configuration
KSC2500
KSC2328A
KSC2331
KSC2316
Products
V
CEO
100
120
120
150
150
150
200
200
250
300
300
300
350
400
400
120
60
60
60
60
60
60
60
60
65
80
80
80
80
80
10
30
60
(V)
V
CBO
100
130
160
200
250
300
350
400
100
120
150
160
200
300
300
400
120
60
80
60
60
60
80
60
80
80
80
80
80
80
30
30
80
(V)
V
EBO
5
8
5
5
5
6
5
5
5
4
4
5
5
5
4
5
5
5
5
8
5
5
5
5
5
5
5
6
7
6
5
8
5
(V)
Max (A)
0.05
0.05
0.6
0.7
0.8
0.8
0.8
0.1
0.5
0.5
0.5
0.8
0.2
0.6
0.6
0.7
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.5
0.7
0.8
I
–
1
1
2
1
2
2
C
Min
100
100
100
100
135
110
100
100
200
140
100
40
40
75
50
50
40
40
40
40
60
70
40
40
50
40
40
45
30
50
40
40
80
2-111
Discrete Power Products –
Max
300
240
300
400
300
600
160
800
300
250
160
250
800
180
240
240
400
300
270
200
300
200
600
320
240
240
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
10
10
10
10
10
10
10
10
10
CE
2
2
2
2
5
1
1
5
2
5
6
5
5
5
2
5
1
2
2
5
(V) @I
C
150
150
150
100
150
500
100
150
500
500
100
50
10
10
10
50
10
10
10
50
10
10
30
10
10
30
30
10
50
50
2
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.25
0.25
0.75
1.6
0.7
0.4
1.6
0.3
0.5
0.5
0.4
0.5
0.5
0.3
0.3
0.5
0.8
0.5
0.4
0.5
0.5
0.5
0.5
0.5
0.7
1
1
1
1
1
2
1
V
@I
CE (sat)
2000
2000
1500
1000
1000
C
500
500
150
500
500
100
100
100
100
500
500
200
100
500
500
50
10
50
10
50
20
20
50
20
20
50
50
50
(mA) @I
B
100
200
50
50
15
50
50
50
10
10
50
50
20
10
50
30
50
50
5
5
5
1
5
1
5
2
2
5
2
2
5
5
5
(mA)