FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 92
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMS6G15US60
Manufacturer Part Number
FMS6G15US60
Description
IGBT 600V 15A 25PM-AA
Manufacturer
Fairchild Semiconductor
Specifications of FMS6G15US60
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 15A
Current - Collector (ic) (max)
15A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
0.935nF @ 30V
Power - Max
73W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G15US60
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMS6G15US60
Quantity:
55
Company:
Part Number:
FMS6G15US60S
Manufacturer:
VICOR
Quantity:
1 000
Part Number:
FMS6G15US60S
Quantity:
55
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Bipolar Power Transistors – General Purpose Transistors (Continued)
KSD2058
KSD2012
KSD1944
KSD1273
KSD1408
KSD1362
KKSD1588
TO-220F PNP Configuration
KSA1304
KSA1614
KSB1015
KSB1366
KSB1017
KSB1097
TO-251(IPAK) NPN Configuration
KSH29
KSH29C
MJD29C
KSC3076
KSC3073
KSD1221
MJD31C
KSC3074
KSH3055I
TO-251(IPAK) PNP Configuration
KSA1241
KSA1243
KSB906
KSA1242
KSA1244
KSH2955
TO-252(DPAK) NPN Configuration
KSH340
MJD340
KSH29C
Products
I
C
1.5
0.5
0.5
10
10
3
3
3
3
4
5
7
3
3
3
4
7
1
1
1
2
3
3
3
5
2
3
3
5
5
1
(A) V
CEO
150
100
100
100
300
300
100
60
60
60
60
80
70
60
55
60
60
80
60
40
50
30
60
50
60
50
30
60
20
50
60
(V) V
CBO
150
100
150
100
100
100
300
300
100
60
60
80
80
80
80
60
60
80
80
40
50
30
60
60
70
55
30
60
35
60
70
(V) V
EBO
7
7
8
6
5
8
7
5
5
7
7
5
7
5
5
5
5
5
7
5
5
5
5
5
7
8
5
5
3
3
5
(V) P
C
25
25
30
40
25
20
30
20
20
25
25
25
30
15
15
15
10
10
20
15
20
20
10
10
20
10
20
20
15
15
15
(W)
Min
100
400
500
100
100
60
40
20
40
40
40
60
40
40
15
15
15
70
70
60
10
70
20
70
70
60
70
20
30
30
15
2-87
Discrete Power Products –
Max
2000
2500
300
320
240
140
200
140
240
200
320
240
200
240
240
300
240
100
240
240
200
320
240
100
240
240
75
75
75
50
75
h
@I
FE
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
C
5
3
3
1
1
1
3
1
4
1
4
1
(A) @V
10
10
10
CE
5
5
4
4
5
5
1
5
5
5
5
1
4
4
4
2
2
5
4
1
4
2
2
5
2
1
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.45
0.15
0.34
0.35
0.4
0.5
0.5
0.3
0.4
0.3
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
–
1
–
–
–
–
1.5
1.5
0.5
1.5
1.7
0.7
0.5
0.5
0.8
1.1
0.7
0.5
0.5
0.7
0.7
0.8
1.2
1.1
0.5
1.7
0.5
1
1
1
1
1
1
1
1
1
1
V
CE (sat)
0.5
0.3
0.1
C
2
2
2
2
3
5
5
1
3
2
3
5
1
1
1
1
2
3
3
3
4
1
2
3
4
3
4
1
(A) @I
0.125
0.125
0.125
0.375
0.125
0.05
0.05
0.05
0.05
0.15
0.05
0.15
0.06
0.01
0.2
0.2
0.3
0.5
0.5
0.1
0.3
0.2
0.3
0.5
0.2
0.3
0.4
0.2
0.3
0.1
0.4
B
(A)
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