FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 90

• Manufacturer Part Number: FMS6G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G15US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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Bipolar Power Transistors – General Purpose Transistors (Continued)
TIP31B
BD241C
TIP31C
KSC2233
KSD526
KSD73
KSD362
TIP41
BD243
TIP41A
BD243A
TIP41B
BD243B
TIP41C
BD243C
KSD363
KSD568
KSD569
KSC2334
BU407
BU407H
BU406
BU408
BD533
BD535
BD537
KSE3055T
MJE3055T
KSE44H
TO-220 PNP Configuration
TIP30A
TIP30C
KSA940
BD240
BD240A
Products
I
C
1.5
10
10
10
3
3
3
4
4
5
5
6
6
6
6
6
6
6
6
6
7
7
7
7
7
7
7
8
8
8
1
1
2
2
(A) V
CEO
100
100
100
100
120
100
150
150
200
200
100
150
80
60
80
60
70
40
45
60
60
80
80
60
80
45
60
80
60
60
80
60
45
60
(V) V
CBO
115
100
200
100
150
100
100
300
100
100
150
330
330
400
400
100
150
80
80
40
45
60
60
80
80
45
60
80
70
70
60
55
70
–
(V) V
EBO
5
5
5
5
5
5
8
5
5
5
5
5
5
5
5
8
7
7
7
6
6
6
6
5
5
5
5
5
5
5
5
5
5
5
(V) P
C
40
40
40
40
30
30
40
65
65
65
65
65
65
65
65
40
40
40
40
60
60
60
60
50
50
50
75
75
50
30
30
25
30
30
(W)
Min
10
10
10
30
40
70
20
15
30
15
30
15
30
15
30
40
40
40
40
20
20
15
20
20
60
15
15
40
15
15
–
–
–
–
2-85
Discrete Power Products –
Max
150
240
240
140
240
200
200
240
100
100
140
50
50
75
75
75
75
75
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
@I
FE
0.01
0.01
0.01
0.5
0.3
0.3
0.3
0.3
0.5
C
–
–
–
–
3
3
3
1
1
5
3
3
3
3
1
3
3
3
4
4
2
1
1
1
1
(A) @V
10
10
CE
–
–
–
–
4
4
4
5
5
5
4
4
4
4
4
4
4
4
5
1
1
5
5
5
5
4
4
1
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.45
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.2
1.2
1.5
1.5
1.5
1.5
1.5
0.5
0.6
0.8
1.1
0.7
1.5
0.7
0.7
1.2
1.5
1.5
1.5
1.5
0.5
0.8
0.8
1.1
0.7
1
2
1
1
1
1
1
1
1
V
CE (sat)
0.5
C
3
3
3
4
3
5
5
6
6
6
6
6
6
6
6
1
5
5
5
5
5
5
6
2
2
2
4
4
8
1
1
1
1
(A) @I
0.375
0.375
0.125
0.125
0.05
0.6
0.4
0.3
0.5
0.5
0.6
0.6
0.6
0.6
0.1
0.5
0.5
0.5
0.5
0.8
0.5
1.2
0.2
0.2
0.2
0.4
0.4
0.4
0.2
0.2
B
1
1
1
1
(A)