FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 83

• Manufacturer Part Number: FMS6G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G15US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TIP112
KSD5018
FJP9100
TIP120
TIP121
TIP122
KSD560
BDW23
BDW23A
BDW23B
BDW23C
BDX53
BDX53A
TIP100
BDX53B
BDX53C
TIP102
BU807
BU806
KSE5740
KSE5741
KSE5742
BDX33B
TIP141T
BDX33C
TIP142T
BDW93
BDW93A
BDW93C
TO-220 PNP Configuration
TIP115
TIP116
TIP117
TIP125
TIP126
I
C
10
10
10
10
12
12
12
2
4
4
5
5
5
5
6
6
6
6
8
8
8
8
8
8
8
8
8
8
8
2
2
2
5
5
(A)
V
CEO
100
275
275
100
100
100
100
100
150
200
300
350
400
100
100
100
100
60
80
45
60
80
45
60
60
80
80
80
45
60
60
80
60
80
(V) V
CBO
100
600
600
100
150
100
100
100
330
400
100
100
100
100
60
80
45
60
80
45
60
60
80
80
80
45
60
60
80
60
80
–
–
–
(V) V
EBO
10
10
–
–
–
–
–
5
5
5
5
7
5
5
5
5
5
5
5
5
5
5
6
6
8
8
8
5
5
5
5
5
5
5
(V)
P
C
50
40
40
65
65
65
30
50
50
50
50
60
60
80
60
60
80
60
60
80
80
80
70
80
70
80
80
80
80
50
50
50
65
65
(W)
1000
1000
1000
1000
2000
1000
1000
1000
1000
1000
1000
Min
500
750
750
750
750
750
750
750
750
750
750
750
750
750
500
500
500
50
50
50
–
–
–
2-78
Discrete Power Products –
15000
20000
20000
20000
20000
20000
20000
20000
20000
20000
Max
5000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
C
–
–
–
2
3
2
2
2
2
3
3
3
3
3
3
3
5
3
5
5
5
5
2
2
2
(A) @V
CE
–
–
–
4
5
3
3
3
2
3
3
3
3
3
3
4
3
3
4
5
5
5
3
4
3
4
3
3
3
4
4
4
3
3
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.5
1.5
1.5
1.5
1.5
1.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
2
2
2
3
3
3
3
2
2
2
2
3
3
3
3
3
3
5
5
4
4
4
3
5
3
5
5
5
5
2
2
2
3
3
(A) @I
0.008
0.005
0.005
0.012
0.012
0.012
0.003
0.008
0.008
0.008
0.008
0.012
0.012
0.006
0.012
0.012
0.006
0.006
0.006
0.008
0.008
0.008
0.012
0.012
0.05
0.05
0.01
0.01
0.02
0.02
0.02
0.2
0.2
0.2
B
(A)