APTGF90DH60TG Microsemi Power Products Group, APTGF90DH60TG Datasheet

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APTGF90DH60TG

Manufacturer Part Number
APTGF90DH60TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF90DH60TG

Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
NTC1
V
G1
E1
0/VBUS SENSE
V
I
NPT IGBT Power Module
P
I
CM
CES
C
GE
D
Asymmetrical - Bridge
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
CR2
Q1
E1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS
SENSE
VBUS
0/VBUS
OUT1
0/VBUS
0/VBUS
SENSE
Parameter
G4
E4
VBUS
O UT2
CR3
Q4
OUT2
OUT1
NTC2
NTC1
VBUS SENSE
NT C2
G 4
E4
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A @ 600V
Max ratings
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Non Punch Through (NPT)
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
±20
-
-
-
-
-
-
-
-
-
-
600
110
315
416
90
APTGF90DH60TG
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
V
I
C
CES
= 90A @ Tc = 80°C
Unit
= 600V
W
V
A
V
Fast IGBT
®
1 - 6

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APTGF90DH60TG Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90DH60TG Application • Welding converters • Switched Mode Power Supplies VBUS SENSE • Switched Reluctance Motor Drives ...

Page 2

... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90DH60TG = 25°C unless otherwise specified j Test Conditions Min 25° 600V T = 125° 25°C V ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B  25  SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF90DH60TG IGBT Diode To Heatsink Thermistor temperature 25    Thermistor value   −    ...

Page 4

... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGF90DH60TG =15V) Output Characteristics (V GE 300 =-55°C 250µs Pulse Test J 250 < 0.5% Duty cycle T =25°C 200 J 150 100 T =125° Collector to Emitter Voltage (V) ...

Page 5

... Switching Energy Losses vs Gate Resistance 400V Eon, 180A CE Eoff, 180A V = 15V 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) www.microsemi.com APTGF90DH60TG Turn-Off Delay Time vs Collector Current 250 V =15V =125°C 200 J 150 100 V =15V 400V =25° 5Ω 100 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90DH60TG Reverse Bias Safe Operating Area 250 ...

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