APTGF90DH60TG Microsemi Power Products Group, APTGF90DH60TG Datasheet - Page 6
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APTGF90DH60TG
Manufacturer Part Number
APTGF90DH60TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF90DH60TG.pdf
(6 pages)
Specifications of APTGF90DH60TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
CE
0.9
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
Single Pulse
www.microsemi.com
50
0.01
250
200
150
100
200
160
120
50
80
40
0
0
20
Operating Frequency vs Collector Current
0
switching
APTGF90DH60TG
V
Hard
Reverse Bias Safe Operating Area
0.1
CE
ZVS
, Collector to Emitter Voltage (V)
40
200
I
C
, Collector Current (A)
60
ZCS
400
1
80
V
D = 50%
R
T
T
J
C
G
CE
= 125°C
= 75°C
= 5Ω
600
= 400V
100
800
120
10
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