APTGF90DH60TG Microsemi Power Products Group, APTGF90DH60TG Datasheet - Page 3
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APTGF90DH60TG
Manufacturer Part Number
APTGF90DH60TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF90DH60TG.pdf
(6 pages)
Specifications of APTGF90DH60TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP4 Package outline
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Torque
V
B
R
T
Wt
R
T
T
ISOL
STG
25/85
thJC
25
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
25
T
1
25
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
−
T
1
T: Thermistor temperature
R
www.microsemi.com
T
: Thermistor value at T
To Heatsink
Diode
APTGF90DH60TG
IGBT
M5
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.55
Max
150
125
100
160
0.3
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 6