APTGF90DH60TG Microsemi Power Products Group, APTGF90DH60TG Datasheet - Page 4
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APTGF90DH60TG
Manufacturer Part Number
APTGF90DH60TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF90DH60TG.pdf
(6 pages)
Specifications of APTGF90DH60TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
350
300
250
200
150
100
50
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
J
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
T
2
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
T
, Junction Temperature (°C)
Transfer Characteristics
1
J
=125°C
3
0
T
10
J
4
=25°C
25
2
5
T
12
6
50
J
=-55°C
7
GE
T
75
T
=15V)
3
J
T
J
=-55°C
=125°C
T
14
Ic=180A
J
8
=25°C
J
Ic=45A
=-55°C
Ic=90A
100 125
9
10
4
16
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300
250
200
150
100
140
120
100
3.5
2.5
1.5
0.5
50
80
60
40
20
0
18
16
14
12
10
4
3
2
1
0
0
8
6
4
2
0
-50
-50
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
V
Ic=45A
I
T
C
APTGF90DH60TG
Output Characteristics (V
CE
J
-25
= 90A
= 25°C
-25
, Collector to Emitter Voltage (V)
50
T
J
T
, Junction Temperature (°C)
C
, Case Temperature (°C)
1
0
100
0
Gate Charge (nC)
25
V
T
Gate Charge
25
150
J
CE
=25°C
=300V
50
2
250µs Pulse Test
< 0.5% Duty cycle
V
V
200
50
GE
CE
75
= 15V
=120V
GE
T
250
75
J
100 125 150
=10V)
=-55°C
T
3
Ic=90A
V
J
=125°C
CE
100
=480V
300
125
350
4
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