IXTN22N100L IXYS, IXTN22N100L Datasheet

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IXTN22N100L

Manufacturer Part Number
IXTN22N100L
Description
MOSFET N-CH 1000V 22A SOT-227
Manufacturer
IXYS
Datasheet

Specifications of IXTN22N100L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 20V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 15V
Input Capacitance (ciss) @ Vds
7050pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.6
Ciss, Typ, (pf)
7050
Qg, Typ, (nc)
270
Trr, Typ, (ns)
1000
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN22N100L
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
IXTN22N100L
Quantity:
142
Linear
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
V
M
Weight
Symbol
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
(T
GSS
DSS
J
L
AS
D
JM
stg
SOLD
DSS
DGR
GSS
GSM
ISOL
GS(th)
d
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
Test Conditions
V
V
V
V
V
ISOL
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 20V, I
GS
DSS
, I
D
, V
D
= 1mA
D
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
t = 1 Minute
t = 1 Second
DSS
GS
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTN22N100L
1000
-55 ... +150
-55 ... +150
3.0
Min.
Characteristic Values
Maximum Ratings
1.3/11.5
1.5/13
1000
1000
3000
2500
±40
±30
700
150
300
260
1.5
Typ.
30
22
50
22
±200 nA
Nm/lb.in.
Nm/lb.in.
600 mΩ
Max.
5.5
50 μA
1 mA
V~
V~
W
°C
°C
°C
°C
°C
V
g
V
V
V
V
V
A
A
A
J
V
I
R
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
miniBLOC
G = Gate
S = Source
D25
Isolation
MiniBLOC with Aluminium Nitride
Designed for Linear Operation
International Standard Package
Avalanche Rated
Molding Epoxy Meets UL94 V-0
Flammability Classification
Easy to Mount
Space Savings
High Power Density
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
E153432
G
= 1000V
= 22A
≤ ≤ ≤ ≤ ≤ 600mΩ Ω Ω Ω Ω
S
D = Drain
D
DS99811B(10/10)
S

Related parts for IXTN22N100L

IXTN22N100L Summary of contents

Page 1

... GSS DSS DS DSS 20V 0.5 • Note 1 DS(on DSS © 2010 IXYS CORPORATION, All Rights Reserved IXTN22N100L Maximum Ratings 1000 1000 ±30 ± 1.5 700 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in. 30 Characteristic Values Min. Typ. ...

Page 2

... Min. Typ. Max. 240 Characteristic Values Min. Typ. Max 1.5 1000 = 100V 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXTN22N100L SOT-227B (IXTN) Outline (M4 screws (4x) supplied) nC °C/W °C 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ...

Page 3

... V GS 12V 2.8 2.4 10V 2.0 9V 1.6 8V 1 -50 = 11A Value vs 125º 25º -50 IXTN22N100L V = 20V GS 14V 12V 10V Volts DS Fig Normalized 11A Value vs. DS(on) D Junction Temperature = 20V I = 22A D - 100 T - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - ...

Page 4

... 25º 0.8 0.9 1.0 1.1 0 Fig. 12. Maximum Transient Thermal Impedance 1.000 C iss 0.100 C oss 0.010 C rss 0.001 0.00001 IXTN22N100L Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge = 500V 40 80 120 160 200 240 Q - NanoCoulombs G 0.0001 0.001 0.01 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 14. Forward-Bias Safe Operating Area 100 R DS(on) 25µs 100µs 10 1ms 10ms 150º 90ºC C Single Pulse 0.1 10 10,000 IXTN22N100L @ T = 90ºC C Limit 25µs 100µs 1ms 10ms DC 100 1,000 V - Volts DS IXYS REF: T_22N100L(8N)3-19-10 10,000 ...

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