IXTN22N100L IXYS, IXTN22N100L Datasheet - Page 4

• Manufacturer Part Number: IXTN22N100L
• Description: MOSFET N-CH 1000V 22A SOT-227
• Manufacturer: IXYS

Specifications of IXTN22N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 15V
• Input Capacitance (ciss) @ Vds: 7050pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 7050
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): 1000
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
70
60
50
40
30
20
10
10
20
18
16
14
12
10
0
8
6
4
2
0
0.3
3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4
0.5
10
5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
T
6
J
V
V
= 125ºC
SD
GS
V
- Volts
- Volts
DS
0.7
20
7
- Volts
T
J
0.8
25
= 125ºC
8
- 40ºC
25ºC
C oss
C iss
C rss
T
J
0.9
= 25ºC
30
9
1.0
35
10
1.1
40
11
1.000
0.100
0.010
0.001
14
12
10
16
14
12
10
0.00001
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 11A
= 10mA
= 500V
5
40
0.0001
10
80
Fig. 8. Transconductance
Q
Fig. 10. Gate Charge
G
15
Pulse Width - Second
0.001
I
- NanoCoulombs
D
120
- Amperes
125ºC
IXTN22N100L
20
T
J
25ºC
= - 40ºC
160
0.01
25
200
30
0.1
240
35
280
40
1