IXTN22N100L IXYS, IXTN22N100L Datasheet - Page 2

• Manufacturer Part Number: IXTN22N100L
• Description: MOSFET N-CH 1000V 22A SOT-227
• Manufacturer: IXYS

Specifications of IXTN22N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 15V
• Input Capacitance (ciss) @ Vds: 7050pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 7050
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): 1000
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
f
(T
S
SM
d(on)
r
d(off)
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
F
F
DS
GS
GS
GS
DS
GS
G
= I
= I
= 15V, V
= 20V, I
= 2Ω (External)
= 0V
= 0V, V
= 800V, I
= 15V, V
S
S
, V
, -di/dt = 100A/μs V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
D
= 25V, f = 1MHz
= 0.5 • V
= 0.3A, T
= 0.5 • V
4,835,592
4,881,106
DSS
, Note 1
DSS
DSS
C
R
4,931,844
5,017,508
5,034,796
= 90°C , tp = 5s
, I
= 100V, V
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
GS
JM
DSS
DSS
= 0V
5,237,481
5,381,025
5,486,715
Characteristic Values
4.5
Min.
240
Characteristic Values
Characteristic Values
Min.
Min.
6,162,665
6,259,123 B1
6,306,728 B1
7050
Typ.
0.05
1000
600
100
270
110
Typ.
Typ.
7.0
36
35
80
50
70
0.18
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.5
9.5
22
50
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
6,683,344
6,710,405 B2
6,710,463
SOT-227B (IXTN) Outline
6,727,585
6,759,692
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXTN22N100L
7,005,734 B2 7,157,338B2
7,063,975 B2