IXTN22N100L IXYS, IXTN22N100L Datasheet - Page 5

• Manufacturer Part Number: IXTN22N100L
• Description: MOSFET N-CH 1000V 22A SOT-227
• Manufacturer: IXYS

Specifications of IXTN22N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 15V
• Input Capacitance (ciss) @ Vds: 7050pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 7050
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): 1000
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
10
1
0
10
T
T
Single Pulse
R
J
C
DS(on)
= 150ºC
= 25ºC
Fig. 13. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
- Volts
C
= 25ºC
DC
1,000
25µs
100µs
1ms
10ms
10,000
100
0.1
10
1
10
R
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 90ºC
Fig. 14. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
C
- Volts
= 90ºC
IXTN22N100L
DC
1,000
25µs
100µs
1ms
10ms
IXYS REF: T_22N100L(8N)3-19-10
10,000