GP2S60B Sharp Microelectronics, GP2S60B Datasheet - Page 2

• Manufacturer Part Number: GP2S60B
• Description: PHOTOINTERRUPTER TRANS OUT 4X3
• Manufacturer: Sharp Microelectronics

Specifications of GP2S60B

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Forward Voltage: 1.2 V
• Maximum Fall Time: 100000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 100000 ns
• Minimum Operating Temperature: - 25 C
• Mounting Style: SMD/SMT
• Wavelength: 930 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2670-2; GP2S60B

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製品質量：約 0.01g
内部結線図
外形寸法図
Pattern for directional
Distinction (NC)
原産国
日本
2
1
Plating area
Top view
Emitter center
(0.7)
1
2
(1.8)
2.7
3.2
Top view
(0.7)
Detector center
・ 指 定 無 き公差は、± 0.15mm
・ ( ) 内寸法は、参考値を示す。
・ 図面寸法は、バリを含まず。
・ 最大外形 （3.2 × 1.7 × 1.1） より突出す
Opaque resin molding portion
るバリ寸法は MAX. 0.15mm。
4
3
3
4
端子表面処理：Au
1
2
3
4
Collector
Emitter
Cathode
Anode
（単位：mm）
2
Sheet No.: D3-A02101JP
GP2S60