GP2S60B Sharp Microelectronics, GP2S60B Datasheet - Page 5

• Manufacturer Part Number: GP2S60B
• Description: PHOTOINTERRUPTER TRANS OUT 4X3
• Manufacturer: Sharp Microelectronics

Specifications of GP2S60B

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Forward Voltage: 1.2 V
• Maximum Fall Time: 100000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 100000 ns
• Minimum Operating Temperature: - 25 C
• Mounting Style: SMD/SMT
• Wavelength: 930 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2670-2; GP2S60B

Fig.1 順電流低減曲線
Fig.3 順電流̶順電圧特性
Fig.5 光電流̶コレクタ ・エミッタ間電圧特性
100
600
500
400
300
200
100
60
50
40
30
20
10
10
0
1
0
25
0
0
T
a
=25˚C
0.5
Collector-emitter voltage V
0
2
Ambient temperature T
Forward voltage V
T
a
1
=75˚C
50˚C
25
4
1.5
50
6
−25˚C
0˚C
25˚C
F
2
(V)
a
(˚C)
CE
(V)
75
I
8
2.5
F
=15mA
10mA
85
7mA
4mA
2mA
100
10
3
5
Fig.2 許容損失低減曲線
Fig.4 光電流̶順電流特性
Fig.6 相対光電流̶周囲温度特性
120
100
700
600
500
400
300
200
100
120
100
80
75
60
40
20
15
80
60
40
20
0
0
0
−25
−25
0
V
T
P,P
P
a
CE
=25C
tot
C
=2V
0
0
Ambient temperature T
Ambient temperature T
5
Forward current I
25
25
10
50
F
(mA)
50
a
a
(˚C)
(˚C)
Sheet No.: D3-A02101JP
15
V
I
75
F
CE
=4mA
=2V
85
75
100
GP2S60
20