GP2S60B Sharp Microelectronics, GP2S60B Datasheet - Page 7

• Manufacturer Part Number: GP2S60B
• Description: PHOTOINTERRUPTER TRANS OUT 4X3
• Manufacturer: Sharp Microelectronics

Specifications of GP2S60B

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Forward Voltage: 1.2 V
• Maximum Fall Time: 100000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 100000 ns
• Minimum Operating Temperature: - 25 C
• Mounting Style: SMD/SMT
• Wavelength: 930 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2670-2; GP2S60B

Fig.13 検出位置特性 （２）
備考 全てのグラフ中の値は参考値であり、保証値ではありませんので、あらかじめご了承の程をお
100
80
60
40
20
−3
願い致します。
−2
OMS card moving distance (mm)
−1
0
1
2
Sensor
3
d
OMS test card
V
I
d=1mm
F
CE
−
=4mA
4
=2V
0
1mm
5
+
6
7
Sheet No.: D3-A02101JP
GP2S60