CMF20120D Cree Inc, CMF20120D Datasheet - Page 6

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
A schematic of the gate driver circuit used for characterization of the SiC MOSFET
is shown below:
The gate driver is an IXYS IXDI414. This device has a 35 V ouput swing, output
resistance of 0.6 Ω typical, and a peak current capability of 14 A. The external
gate resistance used for characterization of the SiC MOSFET was 6.8 Ω. Careful
consideration needs to be given to the selection of the gate driver. The typical
application error is selection of a gate driver that has adequate swing, but output
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+VCC
GND
-VEE
PULSE GEN INPUT
J1
BNC
Stray inductance on source lead causes load
di/dt to be fed back into gate drive which
causes the following:
•
•
CMF20120D Rev. A
1
DRIVE
Switch di/dt is limited
Could cause oscillation
R5
120
10u
10u
C3
C6
+VCC
-VEE
R6
120
R4
330
20V
2
3
+VCC
ISO1
6N137
R GATE
C10
100n
L STRAY
1
U1
IN
LM2931T-5.0
-VEE
-VEE
OUT
THESE COMPONENTS ARE
LOCATED ON THE -VEE
PLANE
3
SiC DMOS
LOAD CURRENT
LOAD CURRENT
C11
100u
6.3V
8
7
6
C14
100n
+VCC
R2
390
R1
1
-VEE
1
2
3
4
U2
VCC
IN
NC
GND
IXDI414
C7
10u
C9
100n
C13
10n
VCC
GND
OUT
OUT
8
7
6
5
-VEE
Kelvin gate connection with separate
source return is highly recommended
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
-VEE
DRIVE
C1
10u
C2
100n
C4
100n
C5
100n
C8
100n
C12
100n
C15
100n
C16
100n
C17
100n
C18
100n
C19
100n
C20
10u
R3
TBD 1206
R7
TBD 1206
R8
TBD 1206
20V
THESE COMPONENTS ARE
LOCATED ON THE GND
PLANE
VGS MONITOR
D1
RB160M-60
D2
RB160M-60
R GATE
J2
BNC
1
SiC DMOS
L STRAY
PIN 1 SOURCE
PIN 2 GATE
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