CMF20120D Cree Inc, CMF20120D Datasheet - Page 7

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7
ESD RATINGS
resistance and current drive capability are not carefully considered. It is critical that
the gate driver possess high peak current capability and low output resistance along
with adequate voltage swing.
A significant benefit of the SiC MOSFET is the elimination of the tail current observed
in silicon IGBTs. However, it is very important to note that the current tail does
provide a certain degree of parasitic dampening during turn-off. Additional ringing and
overshoot is typically observed when silicon IGBTs are replaced with SiC MOSFETs. The
additional voltage overshoot can be high enough to destroy the device. Therefore, it
is critical to manage the output interconnection parasitics (and snubbers) to keep the
ringing and overshoot from becoming problematic.
CMF20120D Rev. A
ESD Test
ESD-CDM
ESD-HBM
ESD-MM
Total Devices Sampled
All Devices Passed 1000V
All Devices Passed 1000V
All Devices Passed 400V
Resulting Classification
IV (>1000V)
2 (>2000V)
C (>400V)