NTTFS5826NLTAG ON Semiconductor, NTTFS5826NLTAG Datasheet - Page 2

• Manufacturer Part Number: NTTFS5826NLTAG
• Description: MOSFET PWR N-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5826NLTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 8 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Power Dissipation: 1.6 W, 3.1 W, 10 W, 19 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 5)
DRAIN−SOURCE DIODE CHARACTERISTICS
4. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
V
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
V
C
g
d(on)
d(off)
DSS
GSS
G(TH)
R
t
= 25°C unless otherwise specified)
RR
t
t
FS
oss
t
t
SD
rss
GS
GD
RR
iss
a
b
G
r
f
/T
/T
J
J
V
V
GS
http://onsemi.com
GS
V
V
= 0 V, f = 1.0 MHz, V
V
V
V
V
GS
V
V
V
V
= 10 V, V
I
GS
V
DS
GS
GS
GS
S
I
GS
V
GS
DS
GS
D
GS
DS
= 7.5 A
= 0 V, d
= 5.0 A, R
= 4.5 V
= 60 V
Test Condition
= 10 V
= 4.5 V, V
= 4.5 V, V
= 0 V,
= 0 V,
= 0 V, V
= V
= 0 V, I
= 15 V, I
2
T
I
I
D
S
A
DS
DS
= 5.0 A
= 5.0 A
= 25°C
IS
, I
/d
D
= 48V, I
GS
D
G
DS
DS
t
D
= 250 mA
= 250 mA
= 100 A/ms,
= 2.5 W
= 5.0 A
= ±20 V
= 48 V,
= 48 V,
T
T
T
T
I
I
DS
D
J
D
D
J
J
J
= 125°C
= 5.0A
= 125°C
= 7.5 A
= 7.5 A
= 25°C
= 25°C
= 25 V
Min
1.5
60
58.6
Typ
850
5.6
8.4
2.5
3.9
1.5
5.4
0.8
0.7
19
25
85
50
16
15
14
15
12
13
8
1
9
4
±100
Max
1.0
3.0
2.3
10
24
32
25
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
nC
ns
ns
W
V
V
S
V