NTTFS5826NLTAG ON Semiconductor, NTTFS5826NLTAG Datasheet - Page 5

• Manufacturer Part Number: NTTFS5826NLTAG
• Description: MOSFET PWR N-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5826NLTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 8 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Power Dissipation: 1.6 W, 3.1 W, 10 W, 19 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.000001
100
0.1
10
1
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.5
D = 0.2
D = 0.1
0.00001
0.0001
0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
http://onsemi.com
0.01
PULSE TIME (sec)
5
0.1
1
10
100
1000