NTTFS5826NLTAG ON Semiconductor, NTTFS5826NLTAG Datasheet - Page 4

• Manufacturer Part Number: NTTFS5826NLTAG
• Description: MOSFET PWR N-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5826NLTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 8 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Power Dissipation: 1.6 W, 3.1 W, 10 W, 19 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
800
600
400
200
100
0.1
10
10
1
0
1
1
0
0.1
V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
C
V
I
V
C
GS
Figure 11. Maximum Rated Forward Biased
D
R
Thermal Limit
Package Limit
DD
GS
rss
= 25°C
= 5 A
DS(on)
= 10 V
t
= 48 V
= 4.5 V
V
d(on)
V
t
d(off)
10
DS
DS
t
Figure 7. Capacitance Variation
f
t
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
Limit
r
10 ms
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1 ms
20
1
dc
100 ms
C
10
C
oss
30
iss
40
10
TYPICAL CHARACTERISTICS
10 ms
V
T
J
DS
50
= 25°C
http://onsemi.com
= 0 V
100
60
100
4
40
30
20
10
10
20
15
10
0
8
6
4
2
0
0.5
5
0
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source vs. Total Charge
Figure 12. Maximum Avalanche Energy vs.
GS
J
T
gs
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
0.6
50
SD
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Q
4
gd
0.7
75
Q
0.8
100
8
T
0.9
125
V
I
T
D
12
DS
J
= 5 A
= 25°C
= 48 V
1.0
I
D
150
= 20 A
1.1
175
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