NTTFS5826NLTAG ON Semiconductor, NTTFS5826NLTAG Datasheet - Page 3

• Manufacturer Part Number: NTTFS5826NLTAG
• Description: MOSFET PWR N-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5826NLTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 8 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Power Dissipation: 1.6 W, 3.1 W, 10 W, 19 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.055
0.045
0.035
0.025
0.015
0.50
2.10
1.90
1.70
1.50
1.30
1.10
0.90
0.70
40
30
20
10
0
−50
0
2
Figure 3. On−Resistance vs. Gate−to−Source
I
V
V
D
10 V
GS
GS
= 7.5 A
Figure 5. On−Resistance Variation with
−25
Figure 1. On−Region Characteristics
= 4.5 V
V
=
V
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
4
V
GS
25
= 4.5 V
Temperature
2
Voltage
50
V
V
V
V
6
GS
GS
GS
GS
75
= 3.8 V
= 3.6 V
= 3.2 V
= 2.8 V
3
100
TYPICAL CHARACTERISTICS
8
125
T
I
D
J
T
4
= 7.5 A
J
= 25°C
http://onsemi.com
= 25°C
150
175
10
5
3
10000
0.040
0.030
0.020
0.010
1000
100
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
T
V
V
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
= 25°C
≥ 10 V
= 0 V
10
V
V
Figure 2. Transfer Characteristics
DS
GS
20
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
GS
2
T
15
= 4.5 V
I
= 10 V
J
D
, DRAIN CURRENT (A)
= 125°C
T
Gate Voltage
J
vs. Voltage
30
= 25°C
T
20
J
= 150°C
T
3
J
= 125°C
T
25
J
40
= −55°C
30
4
50
35
40
60
5