BF1202,215 NXP Semiconductors, BF1202,215 Datasheet - Page 2

• Manufacturer Part Number: BF1202,215
• Description: MOSFET 2N-CH 10V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1202,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 30.5dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
 Short channel transistor with high
 Low noise gain controlled amplifier
 Partly internal self-biasing circuit to
APPLICATIONS
 VHF and UHF applications with
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1202,
BF1202R and BF1202WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
QUICK REFERENCE DATA
2010 Sep 16
V
I
P
y
C
C
F
X
T
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
forward transfer admittance to input
capacitance ratio
ensure good cross-modulation
performance during AGC and good
DC stabilization.
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
j
DS
tot
mod
N-channel dual-gate PoLo MOS-FETs
ig1-ss
rss
fs

drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
PINNING
Marking code legend:
handbook, 2 columns
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
BF1202 marking code: LD*
Fig.1
PIN
1
2
3
4
f = 800 MHz
input level for k = 1% at
f = 1 MHz
40 dB AGC
Top view
4
1
Simplified outline
(SOT143B).
CAUTION
CONDITIONS
2
source
drain
gate 2
gate 1
DESCRIPTION
MSB014
3
2
BF1202; BF1202R; BF1202WR



25



100

lfpage
MIN.
handbook, 2 columns
BF1202R marking code: LE*
Fig.2
BF1202WR marking code: LE*
Fig.3



30
1.7
15
1.1
105

TYP.
3
2
Top view
3
2
Top view
Simplified outline
(SOT143R).
Simplified outline
(SOT343R).
Product specification
10
30
200
40
2.2
30
1.8

150
MAX.
MSB842
4
1
MSB035
4
1
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT