BF1202,215 NXP Semiconductors, BF1202,215 Datasheet - Page 9

• Manufacturer Part Number: BF1202,215
• Description: MOSFET 2N-CH 10V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1202,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 30.5dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2010 Sep 16
handbook, full pagewidth
(MHz)
1000
100
200
300
400
500
600
700
800
900
N-channel dual-gate PoLo MOS-FETs
50
f
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.988
0.988
0.984
0.977
0.965
0.951
0.936
0.919
0.903
0.887
0.870
s
11
DS
= 5 V; V
ANGLE
12.99
19.39
25.65
31.76
37.68
43.42
48.94
54.25
59.34
R GEN
3.26
6.52
(deg)
50 Ω
V I
G2-S
DS
50 Ω
(dB)
F
= 5 V; V
MAGNITUDE
0.9
1.1
min
R2
= 4 V; I
Fig.21 Cross-modulation test set-up.
(ratio)
2.989
3.017
2.990
2.949
2.913
2.853
2.793
2.727
2.664
2.593
2.518
4.7 nF
C2
G2-S
D
= 12 mA; T
s
V GG
21
10 kΩ
= 4 V; I
R G1
R1
V AGC
ANGLE
(deg)
176.2
172.5
165.0
157.6
150.3
143.2
136.3
129.5
123.0
116.7
110.5
4.7 nF
D
C1
9
amb
= 12 mA; T
(ratio)
0.805
0.725
= 25 C
MAGNITUDE
DUT
BF1202; BF1202R; BF1202WR
0.0005
0.0009
0.0018
0.0027
0.0036
0.0039
0.0042
0.0044
0.0043
0.0041
0.0038
(ratio)

amb
V DS
opt
L1
≈
= 25 C
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
(deg)
28.5
47.2
ANGLE
(deg)
MGS315
92.6
88.0
82.5
78.2
75.4
71.8
69.9
68.9
68.5
70.7
72.4
R L
50 Ω
MAGNITUDE
(ratio)
0.995
0.995
0.994
0.992
0.990
0.988
0.986
0.984
0.980
0.975
0.970
Product specification
s
()
R
50
40
22
n
ANGLE
11.79
14.65
17.41
20.10
22.69
25.27
27.90
(deg)
1.50
3.01
5.95
8.86