BF1202,215 NXP Semiconductors, BF1202,215 Datasheet - Page 7
![MOSFET 2N-CH 10V 30MA SOT143R](/photos/16/4/160413/sot143_sml.jpg)
BF1202,215
Manufacturer Part Number
BF1202,215
Description
MOSFET 2N-CH 10V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1202WR115.pdf
(15 pages)
Specifications of BF1202,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Current Rating
30mA
Frequency
400MHz
Gain
30.5dB
Transistor Type
N-Channel Dual Gate
Noise Figure
0.9dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
10V
Power Gain (typ)@vds
34.5@5VdB
Noise Figure (max)
11dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
1.7@5V@Gate 1/1@5V@Gate 2pF
Output Capacitance (typ)@vds
0.85@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
R
Fig.13 Gate 1 current as a function of gate 2
V
f= 50 MHz; f
Fig.15 Unwanted voltage for 1% cross-modulation
(dBμV)
V unw
DS
DS
G1
(μA)
I G1
120
110
100
= 5 V; T
= 120 k (connected to V
= 5 V; V
40
30
20
10
90
80
0
0
0
voltage; typical values.
as a function of gain reduction; typical
values; Fig.21.
unw
j
GG
= 25 C.
= 5 V; R
= 60 MHz; T
10
G1
2
= 120 k;
20
amb
GG
= 25 C.
); see Fig.21.
30
gain reduction (dB)
4
V GG = 5 V
V G2-S (V)
40
4.5 V
4 V
3.5 V
3 V
MCD960
MCD962
50
6
7
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
V
f = 50 MHz; T
Fig.14 Typical gain reduction as a function of the
V
f = 50 MHz; T
Fig.16 Drain current as a function of gain
DS
DS
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 5 V; V
16
12
BF1202; BF1202R; BF1202WR
0
8
4
0
0
0
AGC voltage; see Fig.21.
reduction; typical values; see Fig.21.
GG
GG
amb
amb
= 5 V; R
= 5 V; R
10
= 25 C.
= 25 C.
1
G1
G1
= 120 k;
= 120 k;
20
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
MCD961
MCD963
50
4